УДК 538.975:543.27
(UDK 538.975:543.27)
(MODIFICATION OF LEAD SELENIDE CHALCOGENIDE FILMS’ OPTICAL PROPERTIES BY CONTINUOUS WAVE LASER IRRADIATION)
Research in the field of gas analysis is in demand in various fields. For example, gas analyzers are used in mining areas to detect accumulations of gases, hazardous to health and life (CH4, CO2, CO, NO2). Infrared gas analyzers are most often used in these areas. In the design of most gas analysis devices, the photosensitive element is a semiconductor film, the optical characteristics of which are corrected by heat treatment in an oven. This method of increasing the photosensitivity of PbSe films is technologically difficult to implement, because in most cases it cannot be controlled and gives a high percentage of defects at the stage of manufacturing the photodetectors of the device.
An alternative to using heat treatment in an oven is laser irradiation. Its use makes it possible to carry out a local modification of the structure and, at the same time, a predictable change in the optical and electrical characteristics of the films. The photothermal effect on the film during laser irradiation leads to a sharp and local heating of the material, followed by structural and phase modification due to high temperature, its gradient, and heating/cooling rate. The result of this modification of the structure is laser correction of the photosensitivity of the material in a certain spectral range.
The paper presents the results of studying the effect of continuous laser exposure on the change in the photosensitivity of PbSe films in a narrow spectral range. The result of laser action on PbSe films in the mode of scanning with continuous radiation at a wavelength of 405 nm has been studied. As a result of the photothermal effect on the film structure, reflection and transmission changed in the spectral range 0.3–1.0 μm. At a power density of 24 kW/cm2, photobleaching of the material and its melting were observed, followed by its destruction, leading to the formation of microcracks. As the power density decreased to 22 kW/cm2, photodarkening of the film was observed in the region of laser action. For the modified sections of the film, in this case, a sharp decrease in transmission and reflection was observed. In terms of its optical characteristics, the material approached an absolutely dark body. It was concluded that this modification of the film is especially promising for the photodetection of organic molecules in the form of a gas mixture or liquid.
A.A. Olkhova, winner of the International Young Scientists Awards “Oil and Gas Projects: A Glance into the Future”, ITMO University (Saint Petersburg, Russia), olkhova.a.a@mail.ru
A.A. Patrikeeva, ITMO University, patrikeeva17@gmail.com
M.A. Dubkova, ITMO University, maria.dubkova@mail.ru
M.M. Sergeev, PhD in Engineering, ITMO University, maxim.m.sergeev@gmail.com
Sati DC, Jain H. Coexistence of photodarkening and photobleaching in Ge-Sb-Se thin films. J. Non-Cryst. Solids. 2017; 478: 23–28. https://doi.org/10.1016/j.jnoncrysol.2017.10.003.
Tan CL, Mohseni H. Emerging technologies for high performance infrared detectors. Nanophotonics. 2018; 7(1): 169–197. https://doi.org/10.1515/nanoph-2017-0061.
Karim A, Andersson JY. Infrared detectors: Advances, challenges and new technologies. IOP Conf. Ser.: Mater. Sci. Eng. 2013; 51: article ID 012001. https://doi.org/10.1088/1757-899X/51/1/012001.
Rogalski A. History of infrared detectors. Opto-Electron. Rev. 2012; 20(3): 279–308. https://doi.org/10.2478/s11772-012-0037-7.
Ren YX, Dai TJ, Luo WB, Liu XZ. Evidences of sensitization mechanism for PbSe thin films photoconductor. Vacuum. 2018; 149: 190–194. https://doi.org/10.1016/j.vacuum.2017.12.017.
Grayer J, Ganguly S, Yoo S-S. Embedded surface plasmon resonant disc arrays for improved MWIR sensitivity and increased operating temperature of PbSe photoconductive detectors. In: Tsai DP, Tanaka T (eds.) SPIE Nanoscience + Engineering: Proceedings of the SPIE Conference. Vol. 11082, 11–15 August 2019, San Diego, CA, USA. San Diego, CA, USA: SPIE; 2019. p. 106–115. https://doi.org/10.1117/12.2528779.
Weng B, Qiu J, Yuan Z, Larson PR, Strout GW, Shi Z. Responsivity enhancement of mid-infrared PbSe detectors using CaF2 nano-structured antireflective coatings. Appl. Phys. Lett. 2014; 104(2): article ID 021109. https://doi.org/10.1063/1.4861186.
Fuertes V, Cabrera MJ, Seores J, Muñoz D, Fernández JF, Enríquez E. Hierarchical micro-nanostructured albite-based glass-ceramic for high dielectric strength insulators. J. Eur. Ceram. Soc. 2018; 38(7): 2759–2766. https://doi.org/10.1016/j.jeurceramsoc.2018.02.009.
Feit Z, Fuchs J, Kostyk D, Jalenak W. Liquid phase epitaxy grown PbSnSeTe/PbSe double heterostructure diode lasers. Infrared Phys. Technol. 1996; 37(4): 439–443. https://doi.org/10.1016/1350-4495(95)00120-4.
Liang W, Hochbaum AI, Fardy M, Rabin O, Zhang M, Yang P. Field-effect modulation of seebeck coefficient in single PbSe nanowires. Nano Lett. 2009; 9(4): 1689–1693. https://doi.org/10.1021/nl900377e.
Liang W, Rabin O, Hochbaum AI, Fardy M, Zhang M, Yang P. Thermoelectric properties of p-type PbSe nanowires. Nano Research. 2009; 2: 394–399. https://doi.org/10.1007/s12274-009-9039-2.
Weng B, Ma J, Wei L, Li L, Qiu J, Xu J, et al. Room temperature mid-infrared surface-emitting photonic crystal laser on silicon. Appl. Phys. Lett. 2011; 99(22); article ID 221110. https://doi.org/10.1063/1.3665402.
Varlamov PV, Sergeev MM, Andreeva YaM, Gresko VR, Loshachenko AS, Vocanson F, et al. Local annealing of Ag-TiO2 nanocomposite films with plasmonic response by CW UV laser scanning. Materials Proceedings. 2021; 4(1): article ID 50. https://doi.org/10.3390/IOCN2020-07864.
Teng Y, Zhou J, Lin G, Hua J, Zeng H, Zhou S, et al. Ultrafast modification of elements distribution and local luminescence properties in glass. J. Non-Cryst. Solids. 2012; 358(9): 1185–1189. https://doi.org/10.1016/j.jnoncrysol.2012.02.017.
Zhang H, Zhang Y, Song X, Yu Y, Cao M, Che Y, et al. High performance PbSe colloidal quantum dot vertical field effect phototransistors. Nanotechnology. 2016; 27: article ID 425204. https://doi.org/10.1088/0957-4484/27/42/425204.
Thambidurai M, Jang Y, Shapiro A, Yuan G, Xiaonan H, Xuechao Y, et al. High performance infrared photodetectors up to 28 µm wavelength based on lead selenide colloidal quantum dots. Opt. Mater. Express. 2017; 7(7): 2326–2335. https://doi.org/10.1364/OME.7.002326.
Sulaman M, Yang S, Bukhtiar A, Fu C, Song T, Wang H, et al. High performance solution-processed infrared photodetector based on PbSe quantum dots doped with low carrier mobility polymer poly (N-vinylcarbazole). RSC Adv. 2016; (50): 44514–44521. https://doi.org/10.1039/C5RA25761A.
Gao J, Nguyen SC, Bronstein ND, Alivisatos AP. Solution-processed, high-speed, and high-quantum-efficiency quantum dot infrared photodetectors. ACS Photonics. 2016; 3(7): 1217–1222. https://doi.org/10.1021/acsphotonics.6b00211.
Olkhova AA, Patrikeeva AA, Sergeev MM. Electrical and optical properties of laser-induced structural modifications in PbSe films. Appl. Sci. 2022; 12(19): article ID 10162. https://doi.org/10.3390/app121910162.
Nepomnyaschy SV, Pogodina SB. Method for manufacturing a semiconductor structure on the basis of lead selenide. WO2013/154462 A2 (Patent) 2013.
Khairallah SA, Anderson AT, Rubenchik A, King WE. Laser powder-bed fusion additive manufacturing: Physics of complex melt flow and formation mechanisms of pores, spatter, and denudation zones. Acta Mater. 2018; 108: 36–45. https://doi.org/10.1016/j.actamat.2016.02.014.
Xiao B, Zhang Y. Marangoni and buoyancy effects on direct metal laser sintering with a moving laser beam. Numerical Heat Transfer, Part A: Applications. 2007; 51(8): 715–733. https://doi.org/10.1080/10407780600968593.